Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 2.1W |
FET Type | N and P Channel Complementary type |
Drain source voltage (Vdss) | 40V |
Current at 25 ° C - continuous drain (Id) | 5.2A(Ta),4.7A(Ta) |
On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 4.5A,10V,60 mΩ @ 3.8A,10V |
Vgs (th) (maximum) for different Ids | 1V @ 250mA(min) |
Gate charge (Qg) at different Vgs (maximum) | 17nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 770pF @ 40V,1000pF @ 20V |
FET function | Logic level gate |